Switching devices in sol–gel hybrid thin film technology

Thin Solid Films 517 (2009) 4658–4662

A. Dima, M. Dima, K.G. Watkins, G. Dearden, Dun Liu, C.J. Williams, M. Casalino, M. Gagliardi, I. Rendina, F.G. Della Corte

Development of non-volatile memories based on organic soft materials is one of two main trends in industry for flash-memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast programming switching devices. SiO2-Rose Bengal (bis-triethylammonium) hybrid thin films are reported here together with their characterizations. The technology yields well reproducible films with good current–voltage switching characteristics. Owing to their physical and chemical stability the films are suited to standard micro-photolitography technology, rendering their fabrication cost-effective.