Silicon nano-particles in SiO2 sol–gel film for nano-crystal memory device applications

Microelectronics Journal 39 (2008) 768–770

A. Dima, F.G. Della Corte, C.J. Williams, K.G. Watkins, G. Dearden, N. O’Hare, M. Casalino, I. Rendina, M. Dima

A novel 2-bit nano-silicon based non-volatile memory is proposed to double memory density. The thin film structure exhibits two conduction states (ON and OFF) at different voltages and has a cost-effective structure. The structure utilizes the good electrical properties of fluorinated SiO2 thin films, together with the bi-stable properties conferred by the nano-silicon particles therein embedded. A polymeric layer of 8-hydroxyquinoline aluminum salt (Alq3) further deposited on the top of the nano-particle layer through chemical evaporation and a silver paste contact determines the final structure. The positive 0–15V scan reveals two discontinuities with an ON/ OFF ratio of 10^4–10^5 (2–4 V) and OFF/ON of 10^3 (12.5–13.0 V). The reverse scan displays again two distinct thresholds, range of 10.5–11.0V (ON/OFF ratio 10^3), respectively, 0.5V (OFF/ON ratio 10^5–10^4)